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August undefined, 2024

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WebScribd es el sitio social de lectura y editoriales más grande del mundo. WebThe drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined. Using these values, the …

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Web42 Followers, 121 Following, 1 Posts - See Instagram photos and videos from Classic Joy (@clas.sic655) WebAs the leading power supplier with >20 years of heritage in silicon carbide (SiC) technology development we are prepared to cater to the need for smarter, more efficient energy generation, transmission, and consumption.

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